GaN Semiconductors

Results: 711
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Power Integrations AC/DC Converters 85 W (85-265 VAC) 1.810In Stock
Min.: 1
Mult.: 1
: 2.000

Texas Instruments Gate Drivers 600-V 150-m? GaN wit h integrated driver A 595-LMG3411R150RWHT 703In Stock
Min.: 1
Mult.: 1
: 2.000

Texas Instruments Gate Drivers 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHT 305In Stock
Min.: 1
Mult.: 1
: 2.000

MACOM RF Amplifier MMIC GaN HEMT, G28V4-1, 25W, 5.2-5.9 GHz
12In Stock
Min.: 1
Mult.: 1

Qorvo GaN FETs DC-6.0GHz 30 Watt 28V GaN Flangeless 15In Stock
Min.: 1
Mult.: 1

Power Integrations AC/DC Converters 45 W (85-265 VAC) 1.933In Stock
Min.: 1
Mult.: 1
: 2.000

Power Integrations AC/DC Converters 90 W (85-265 VAC) 1.785In Stock
Min.: 1
Mult.: 1
: 2.000

onsemi NCP1568G04DBR2G
onsemi AC/DC Converters ACTIVE CLAMP FLYBACK 2.418In Stock
Min.: 1
Mult.: 1
: 2.500

onsemi NCP1568G03DBR2G
onsemi AC/DC Converters ACTIVE CLAMP FLYBACK 2.322In Stock
Min.: 1
Mult.: 1
: 2.500

STMicroelectronics GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor 374In Stock
Min.: 1
Mult.: 1
: 1.800

STMicroelectronics GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor 728In Stock
Min.: 1
Mult.: 1
: 3.000

STMicroelectronics GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor 768In Stock
Min.: 1
Mult.: 1
: 3.000

STMicroelectronics Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 879In Stock
Min.: 1
Mult.: 1
: 3.000

EPC GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP 2.139In Stock
Min.: 1
Mult.: 1
: 2.500

EPC GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP 900In Stock
Min.: 1
Mult.: 1
: 1.000

Infineon Technologies GaN FETs CoolGaN Drive HB 600 V G5 2.393In Stock
Min.: 1
Mult.: 1
: 3.000
Infineon Technologies GaN FETs 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.646In Stock
Min.: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.667In Stock
Min.: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.345In Stock
Min.: 1
Mult.: 1
: 3.000

Infineon Technologies GaN FETs CoolGaN Bidirectional Switch 3.138In Stock
Min.: 1
Mult.: 1
: 4.000
onsemi GaN FETs GaN FET, 700V, 75m, DPAK 2.460In Stock
Min.: 1
Mult.: 1
Max.: 250
: 250

onsemi GaN FETs GaN FET, 700V, 75m, 8x8 2.463In Stock
Min.: 1
Mult.: 1
Max.: 246
: 250

onsemi GaN FETs GaN FET, 700V,101m, 8x8 2.472In Stock
Min.: 1
Mult.: 1
Max.: 248
: 250

onsemi GaN FETs GaN FET, 700V, 132m, 8x8 2.500In Stock
Min.: 1
Mult.: 1
Max.: 250
: 250

Texas Instruments Gate Drivers 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHR 110In Stock
Min.: 1
Mult.: 1
: 250