GD3162 Advanced IGBT/SiC Gate Drivers

NXP Semiconductors GD3162 Advanced IGBT/SiC Gate Drivers are designed to drive SiC and IGBT modules in xEV traction inverters. The NXP Semiconductors GD3162 drivers enable space savings and performance through advanced gate-drive functionality. The device includes integrated galvanic isolation, a programmable SPI interface, and advanced protection features like overtemperature, desaturation, and current sense protection. With integrated boost capability, the GD3162 can directly drive most SiC MOSFET and IGBT/SiC module gates.

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NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
2.327In Stock
Min.: 1
Mult.: 1

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C 6 V 4.75 V Tray
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
1.000In Stock
Min.: 1
Mult.: 1

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C 6 V 4.75 V Tray
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1
Mult.: 1
: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C 6 V 4.75 V Reel, Cut Tape
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1
Mult.: 1
: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C 6 V 4.75 V Reel, Cut Tape
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1.000
Mult.: 1.000
: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Reel
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 176
Mult.: 176

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Tray
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 1.000
Mult.: 1.000
: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Reel
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 176
Mult.: 176

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Tray