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DRV8300/DRV8300-Q1 3-Phase Gate Drivers
Texas Instruments DRV8300/DRV8300-Q1 3-Phase Gate Drivers provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D/DRV8300D-Q1 generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Texas Instruments DRV8300/DRV8300-Q1 gate drive architecture supports peak up to 750mA source and 1.5A sink currents.