Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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Resultados: 314
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Tipo de producto Tecnología Estilo de montaje Empaquetado / Estuche
STMicroelectronics MOSFET N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP packag 574En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package 653En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS 441En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 1.025En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP packag 1.012En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 383En existencias
1.000Fecha prevista: 25/02/2026
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected 207En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected 1.554En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh 229En existencias
1.000Fecha prevista: 06/04/2026
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 422En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected 880En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5 986En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5 13En existencias
1.000Fecha prevista: 23/03/2026
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package 137En existencias
Mín.: 1
Múlt.: 1

MOSFETs Si Through Hole TO-3PF-3

STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 30 A very high speed 342En existencias
1.000Fecha prevista: 10/04/2026
Mín.: 1
Múlt.: 1
Bobina: 1.000

IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics IGBT 600V 20A High Speed Trench Gate IGBT 1.076En existencias
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-220-3
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 185En existencias
600Fecha prevista: 27/07/2026
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 452En existencias
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 40A trench gate field-stop IGBT 1.138En existencias
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 60A Trench Gate 1.8V Vce IGBT 258En existencias
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo 400En existencias
600Fecha prevista: 13/04/2026
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB series IGBT 470En existencias
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGBT 297En existencias
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT Trench gate H series 650V 80A HiSpd 74En existencias
Mín.: 1
Múlt.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET 163En existencias
Mín.: 1
Múlt.: 1
Bobina: 1.000

MOSFETs Si SMD/SMT H2PAK-2