2ED2182S06FXUMA1

Infineon Technologies
726-2ED2182S06FXUMA1
2ED2182S06FXUMA1

Fabr.:

Descripción:
Controlador de puerta LEVEL SHIFT DRIVER

Hoja de datos:
Modelo ECAD:
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Más información sobre Infineon Technologies 2ED2182S06FXUMA1

En existencias: 37

Existencias:
37
Puede enviarse inmediatamente
Pedido:
2.500
Fecha prevista: 05/03/2026
2.500
Fecha prevista: 01/10/2026
Plazo de producción de fábrica:
34
Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.
Plazo de entrega largo indicado para este producto.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:

Precio (EUR)

Cant. Precio unitario
Precio total
1,57 € 1,57 €
1,16 € 11,60 €
1,06 € 26,50 €
0,963 € 96,30 €
0,903 € 225,75 €
0,886 € 443,00 €
0,869 € 869,00 €
Bobina completo(s) (realice el pedido en múltiplos de 2500)
0,81 € 2.025,00 €
0,777 € 3.885,00 €

Atributo del producto Valor del atributo Seleccionar atributo
Infineon
Categoría de producto: Controlador de puerta
RoHS:  
IGBT, MOSFET Gate Drivers
Half-Bridge
SMD/SMT
DSO-8
1 Driver
1 Output
2.5 A
10 V
20 V
15 ns
15 ns
- 40 C
+ 125 C
Reel
Cut Tape
Marca: Infineon Technologies
Tipo lógico: CMOS, LSTTL
Tiempo de retraso de apagado máximo: 300 ns
Tiempo de retraso de encendido máximo: 300 ns
Sensibles a la humedad: Yes
Corriente de suministro operativa: 550 uA
Pd (disipación de potencia): 625 mW
Tipo de producto: Gate Drivers
Retardo de propagación (máx.): 300 ns
Apagado: Shutdown
Cantidad del paquete de fábrica: 2500
Subcategoría: PMIC - Power Management ICs
Tecnología: Si
Alias de parte #: 2ED2182S06F SP003244532
Peso unitario: 233,750 mg
Productos encontrados:
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Atributos seleccionados: 0

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

Small Home Appliance Solutions

Infineon Small Home Appliance Solutions features a portfolio of products that fit into small home appliance applications. There is a growing trend for style and more efficiency, which designers are addressing with countless variations. Energy-efficient, modern-looking, wipe-clean, and hermetically sealed surfaces are only a few characteristics that a design engineer has to consider and incorporate into new designs. Infineon delivers solutions for several key areas, such as induction heating, as well as appliances that require motor control solutions with energy-efficient, integrated power devices.

2ED210x Low-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers offer an integrated bootstrap diode (BSD) and silicon-on-insulator (SOI) technology in a DSO-8 or DSO-14 package. The high-voltage, level-shift SOI technology in these 0.7A drivers provides robustness against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process enables monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers feature excellent ruggedness and noise immunity against negative transient voltages on the VS pin.

2ED218x High-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers feature silicon-on-insulator (SOI) technology and an integrated bootstrap diode (BSD) in a DSO-8 or DSO-14 package. The series combines high current with high speed to drive MOSFETs and IGBTs with typical 2.5A sink and source current. The high-voltage, level-shift SOI technology provides robustness to protect against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers offer ruggedness and noise immunity against negative transient voltages on the VS pin.

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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