Results: 6
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
2.872In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 174 A 4.4 mOhms 20 V 4.6 V 67 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
1.661In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 122 A 6.3 mOhms 20 V 4.6 V 47 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
2.534In Stock
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 150 V 190 A 4.3 mOhms 20 V 4.6 V 78 nC - 55 C + 175 C 319 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
2.640In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 143 A 5.4 mOhms 20 V 4.6 V 55 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IPP076N15N5XKSA1
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
405In Stock
1.500On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 112 A 7.6 mOhms 20 V 4.6 V 49 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 150 V 148 A 6.32 Ohms 10 V 3 V 48 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape