FGH4L40Tx 1200V/40A Field Stop Power IGBTs

onsemi FGH4L40Tx 1200V/40A Field Stop Power Insulated-Gate Bipolar Transistors (IGBTs) are engineered for high-efficiency switching in demanding power applications. These IGBTs feature low conduction and switching losses, ideal for use in motor drives, Uninterruptible Power Supply (UPS) systems, and renewable energy inverters. With robust short-circuit capability and soft switching performance, the IGBTs support high-frequency operation while maintaining thermal stability. The optimized design of the onsemi Field Stop technology-based FGH4L40Tx IGBTs enable reliable performance in both hard- and soft-switching topologies, helping designers meet stringent efficiency and power density requirements in industrial and energy-focused systems.

Resultados: 3
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Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad.
Cant. RoHS Modelo ECAD Tecnología
Empaquetado / Estuche
Estilo de montaje
Configuración
Voltaje colector-emisor VCEO máx.
Voltaje de saturación colector-emisor
Voltaje puerta-emisor máximo
Corriente continua del colector a 25 C
Pd (disipación de potencia)
Temperatura operativa mínima
Temperatura operativa máxima
Serie
Empaquetado
onsemi IGBT FS7 1200V 40A SCR IGBT TO247 4L COPACK
Hoja de datos
443En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.49 V 30 V 80 A 600 W - 55 C + 175 C FGH4L40T120RWD Tube
onsemi IGBT 1200V/40A FS7 IGBT NSCR TO247
Hoja de datos
428En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole SIngle 1.2 kV 1.65 V 20 V 80 A 384 W - 55 C + 175 C FGH4L40T120SWD Tube

onsemi IGBT IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode.
Hoja de datos
384En existencias
Mín.: 1
Múlt.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.55 V - 20 V, 20 V 80 A 306 W - 55 C + 175 C FGH4L40T120LQD Tube