Silicon Carbide (SiC) Diodes & Rectifiers

IXYS Silicon Carbide (SiC) Diodes and Rectifiers are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. These SiC diodes and rectifiers come with a 1200V maximum repetitive reverse blocking voltage. They are available in dual-, phase-leg, or common cathode configurations. The IFAVMTotal for these devices ranges from 12.5A to 60A. IXYS Silicon Carbide (SiC) Diodes and Rectifiers are offered in either SOT-227B or ISOPLUS247 packages. These devices are ideal for use in solar inverters, uninterruptible power supply (UPS), welding equipment, switched-mode power supplies, medical equipment, or as high-speed rectifiers.

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Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Estilo de montaje Empaquetado / Estuche Configuración If - Corriente delantera Vrrm - Tensión inversa repetitiva Vf - Tensión delantera Ifsm - Corriente de sobretensión delantera Ir - Corriente inversa Temperatura operativa mínima Temperatura operativa máxima Empaquetado
Littelfuse Diodos Schottky de SiC Pwr Diode Disc-Schottky SOT-227B miniblc 90En existencias
Mín.: 1
Múlt.: 1

Screw Mount SOT-227B-4 Dual 105 A 1.2 kV 1.6 V 1.15 kA 140 uA - 40 C + 150 C Tube
Littelfuse Diodos Schottky de SiC Pwr Diode Disc-Schottky SOT-227B miniblc 3En existencias
Mín.: 1
Múlt.: 1

Screw Mount SOT-227B-4 Dual 44 A 1.2 kV 1.5 V 1.15 kA 35 uA - 40 C + 150 C Tube