RF7x Automotive Power MOSFETs

ROHM Semiconductor RF7x Automotive Power MOSFETs (comprising the RF7G, RF7L, and RF7P variants) are high-performance Silicon Carbide (SiC) devices designed for demanding power applications. These MOSFETs feature a 1200V voltage rating, making the ROHM RF7x MOSFETs ideal for high-voltage environments such as automotive inverters, onboard chargers, and industrial power systems. The RF7G series offers balanced characteristics suitable for general-purpose use, while the RF7L series is optimized for low conduction losses, enhancing efficiency in continuous operation scenarios like battery management and energy storage. The RF7P series excels in high-speed switching, making it well-suited for applications requiring rapid response, such as telecom equipment and LED lighting. Across all variants, key features include low ON-resistance, fast switching performance, high reliability, and compact packaging, enabling efficient and robust power conversion in both automotive and industrial sectors.

Resultados: 8
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Tecnología Estilo de montaje Empaquetado / Estuche Polaridad de transistor Número de canales Vds (Tensión separación drenador-fuente) Id: corriente de drenaje continuo Rds encendido (drenaje de la fuente en resistencia) Vgs (tensión de compuerta-fuente) Vgs th (tensión umbral compuerta-fuente) Qg (carga de compuertas) Temperatura operativa mínima Temperatura operativa máxima Pd (disipación de potencia) Modo canal Empaquetado
ROHM Semiconductor MOSFET DFN2020 N-CH 60V 12A 2.093En existencias
Mín.: 1
Múlt.: 1
Bobina: 3.000
Si SMD/SMT DFN2020-8 N-Channel 1 Channel 60 V 12 A 31 mOhms 20 V 2.5 V 7.3 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN 100V 12A N-CH 2.100En existencias
Mín.: 1
Múlt.: 1
Bobina: 3.000
Si SMD/SMT DFN2020-8 N-Channel 1 Channel 100 V 12 A 59 mOhms 20 V 2.5 V 6.9 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN2020 N-CH 40V 12A 1.201En existencias
Mín.: 1
Múlt.: 1
Bobina: 3.000
Si SMD/SMT DFN2020-8 N-Channel 1 Channel 40 V 12 A 18.5 mOhms 20 V 2.5 V 8.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN2020 P-CH 40V 12A 185En existencias
3.000Fecha prevista: 27/07/2026
Mín.: 1
Múlt.: 1
Bobina: 3.000
Si SMD/SMT DFN2020-8 P-Channel 1 Channel 40 V 12 A 61 mOhms - 20 V, 5 V 2.5 V 15.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN2020 N-CH 40V 12A
3.000Fecha prevista: 23/03/2026
Mín.: 1
Múlt.: 1
Bobina: 3.000

Si SMD/SMT DFN2020-8 N-Channel 1 Channel 40 V 12 A 19 mOhms 4 V 2.5 V 8.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN2020 P-CH 60V 12A
2.900Fecha prevista: 26/03/2026
Mín.: 1
Múlt.: 1
Bobina: 3.000

Si SMD/SMT DFN2020-8 P-Channel 1 Channel 60 V 12 A 119 mOhms - 20 V, 5 V 2.5 V 15.7 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN2020 N-CH 60V 12A
3.000Fecha prevista: 23/03/2026
Mín.: 1
Múlt.: 1
Bobina: 3.000

Si SMD/SMT DFN2020-8 N-Channel 1 Channel 60 V 12 A 31 mOhms 20 V 2.5 V 7.5 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET DFN 100V 12A N-CH
3.000Fecha prevista: 05/03/2026
Mín.: 1
Múlt.: 1
Bobina: 3.000

Si SMD/SMT DFN2020-8 N-Channel 1 Channel 100 V 12 A 31 mOhms 20 V 4 V 6.8 nC - 55 C + 150 C 23 W Enhancement Reel, Cut Tape