IRLHS6242TRPBF

Infineon Technologies
942-IRLHS6242TRPBF
IRLHS6242TRPBF

Fabr.:

Descripción:
MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC

Hoja de datos:
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Más información sobre Infineon Technologies IRLHS6242TRPBF

En existencias: 709

Existencias:
709
Puede enviarse inmediatamente
Pedido:
4.000
Fecha prevista: 19/03/2026
Plazo de producción de fábrica:
20
Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:
Empaquetado:
Bobina completo(s) (realice el pedido en múltiplos de 4000)

Precio (EUR)

Cant. Precio unitario
Precio total
Cinta / MouseReel™ †
0,568 € 0,57 €
0,32 € 3,20 €
0,239 € 23,90 €
0,20 € 100,00 €
0,181 € 181,00 €
0,163 € 326,00 €
Bobina completo(s) (realice el pedido en múltiplos de 4000)
0,145 € 580,00 €
0,12 € 960,00 €
† La tarifa de 5,00 € de MouseReel™ se añadirá y calculará en el carro de compra. Los pedidos de MouseReel™ no se pueden cancelar ni devolver. ↩

Atributo del producto Valor del atributo Seleccionar atributo
Infineon
Categoría de producto: MOSFET
RoHS:  
Si
SMD/SMT
PQFN 2x2 (DFN2020)
N-Channel
1 Channel
20 V
22 A
11.7 mOhms
- 12 V, 12 V
1.1 V
14 nC
- 55 C
+ 150 C
9.6 W
Enhancement
StrongIRFET
Reel
Cut Tape
MouseReel
Marca: Infineon Technologies
Configuración: Single
Tiempo de caída: 13 ns
Transconductancia delantera: mín.: 36 S
Tipo de producto: MOSFETs
Tiempo de establecimiento: 15 ns
Serie: N-Channel
Cantidad del paquete de fábrica: 4000
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo típico de retraso de apagado: 19 ns
Tiempo de retardo de conexión típico: 5.8 ns
Peso unitario: 10,430 mg
Productos encontrados:
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Atributos seleccionados: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Ultra Compact PQFN HEXFET® Power MOSFETs

Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smartphones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. 

Inductive Wireless Charging Solutions

Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits of wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging, whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.

Wireless Charging Solutions

Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

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