CoolGaN™ Drive HB 600V G5 Switches

Infineon Technologies CoolGaN™ Drive HB 600V G5 Switches integrate a half-bridge power stage featuring two 600V enhancement-mode CoolGaN switches with on-resistance options of 140mΩ, 270mΩ, or 500mΩ. These switches include built-in gate drivers and come in a compact 6mm × 8mm TFLGA-27 package. Designed for low-/medium-power applications, these switches are ideal for high-density motor drives and switch-mode power supplies (SMPS), leveraging the superior switching performance of CoolGaN technology. Infineon’s CoolGaN switches feature a robust gate structure that ensures minimal on-resistance when driven by a continuous gate current of just a few milliamps in the “on” state.

Resultados: 4
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Estilo de montaje Empaquetado / Estuche Rds encendido (drenaje de la fuente en resistencia) Temperatura operativa mínima Temperatura operativa máxima Nombre comercial
Infineon Technologies FET de GaN 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.352En existencias
Mín.: 1
Múlt.: 1
: 3.000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies FET de GaN 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.371En existencias
Mín.: 1
Múlt.: 1
: 3.000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies FET de GaN 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode 2.082En existencias
Mín.: 1
Múlt.: 1
: 3.000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies FET de GaN CoolGaN Drive HB 600 V G5 45En existencias
3.000Fecha prevista: 30/06/2026
Mín.: 1
Múlt.: 1
: 3.000
SMD/SMT TFLGA-27 - 40 C + 150 C CoolGaN