XHP™ 2 1700V IGBT Modules

Infineon Technologies XHP™ 2 1700V IGBT Modules are high-performance power devices built on a scalable platform optimized for demanding high-power systems. The XHP 2 package features a low-inductive, multi-package housing that minimizes parasitic inductance and enables clean switching behavior. These characteristics help reduce voltage overshoot and switching losses in high-current applications. Combined with advanced TRENCHSTOP™ IGBT technologies and .XT interconnection, these modules deliver high current density, low saturation voltage, and robust thermal cycling capability, supporting reliable operation at elevated junction temperatures up to +175°C. High power density and a scalable mechanical design allow consistent integration across different converter platforms while maintaining efficiency and long service life.

Resultados: 2
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Producto Configuración Voltaje colector-emisor VCEO máx. Voltaje de saturación colector-emisor Corriente continua del colector a 25 C Corriente de fuga puerta-emisor Pd (disipación de potencia) Temperatura operativa máxima Empaquetado
Infineon Technologies Módulos IGBT
3Pedido
Mín.: 1
Múlt.: 1

IGBT Module Module 1.7 kV 1.68 V 1.4 kA 200 nA 1.4 MW + 150 C Tray
Infineon Technologies Módulos IGBT
3Pedido
Mín.: 1
Múlt.: 1

IGBT Module Module 1.7 kV 1.65 V 2 kA 20 mW + 150 C Tray