SLLIMM-Nano 3-Phase IGBT Inverter Bridges

STMicroelectronics SLLIMM-Nano 3-Phase IGBT Inverter Bridges combine a compact, high-performance AC motor drive into a simple, rugged design. The bridges are composed of six IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving. This provides low electromagnetic interference (EMI) characteristics with optimized switching speed. The packages are optimized for thermal performance and compactness for built-in motor applications or other low power applications with limited assembly space. Typical applications for STMicroelectronics SLLIMM-Nano bridges include 3-phase inverters for motor drives, dishwashers, refrigerator compressors, heating systems, air-conditioning fans, and draining and recirculation pumps.

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Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad.
Cant. RoHS Modelo ECAD Producto
Configuración
Voltaje colector-emisor VCEO máx.
Voltaje de saturación colector-emisor
Corriente continua del colector a 25 C
Pd (disipación de potencia)
Empaquetado / Estuche
Temperatura operativa mínima
Temperatura operativa máxima
Empaquetado
STMicroelectronics Módulos IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
Hoja de datos
219En existencias
Mín.: 1
Múlt.: 1

SiC IGBT Modules 3-Phase Inverter 600 V 1.7 V 5 A 13.6 W N2DIP-26 - 40 C + 125 C Tube
STMicroelectronics Módulos IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
Hoja de datos
9En existencias
Mín.: 1
Múlt.: 1

IGBT Modules 3-Phase Inverter 600 V 2.15 V 3 A 12 W N2DIP-26 - 40 C + 125 C Tube
STMicroelectronics Módulos IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
Hoja de datos
No en almacén Plazo producción 16 Semanas
Mín.: 360
Múlt.: 360

SiC IGBT Modules Half Bridge 600 V 2.15 V 3 A N2DIP-26 + 175 C Tube
STMicroelectronics Módulos IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
Hoja de datos
No en almacén Plazo producción 16 Semanas
Mín.: 1
Múlt.: 1

SiC IGBT Modules Half Bridge 600 V 2.15 V 5 A N2DIP-26 + 175 C Tube