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IMZA65R107M1HXKSA1

Name: Infineon IMZA65R107M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA65R107M1HXKS
Price: 4.05 EUR
Availability: InStock

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726-IMZA65R107M1HXKS

Fabr. N.º:

IMZA65R107M1HXKSA1

Fabr.:

Infineon Technologies

Descripción:

MOSFET de SiC SILICON CARBIDE MOSFET

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IMZA65R107M1HXKSA1 Hoja de datos (PDF)

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En existencias: 444

Existencias:: 444 Puede enviarse inmediatamente

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Plazo de producción de fábrica:: 8 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.

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Precio (EUR)

Cant.	Precio unitario	Precio total
	4,05 €	4,05 €
	2,92 €	29,20 €
	2,58 €	258,00 €
	2,39 €	1.147,20 €

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Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	Infineon
Categoría de producto:	MOSFET de SiC
RoHS:
Estilo de montaje:	Through Hole
Empaquetado / Estuche:	TO-247-4
Polaridad de transistor:	N-Channel
Número de canales:	1 Channel
Vds (Tensión separación drenador-fuente):	650 V
Id: corriente de drenaje continuo:	20 A
Rds encendido (drenaje de la fuente en resistencia):	142 mOhms
Vgs (tensión de compuerta-fuente):	- 5 V, + 23 V
Vgs th (tensión umbral compuerta-fuente):	5.7 V
Qg (carga de compuertas):	15 nC
Temperatura operativa mínima:	- 55 C
Temperatura operativa máxima:	+ 150 C
Pd (disipación de potencia):	75 W
Modo canal:	Enhancement
Nombre comercial:	CoolSiC
Marca:	Infineon Technologies
Configuración:	Single
Tiempo de caída:	6.4 ns
Empaquetado:	Tube
Tipo de producto:	SiC MOSFETS
Tiempo de establecimiento:	7.4 ns
Serie:	IMZA65R107
Cantidad del paquete de fábrica:	240
Subcategoría:	Transistors
Tecnología:	SiC
Tiempo típico de retraso de apagado:	12.2 ns
Tiempo de retardo de conexión típico:	6.6 ns
Alias de parte #:	IMZA65R107M1H SP005398435
Peso unitario:	6 g

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Residential Energy Storage Systems (ESS)

Infineon Residential Storage Solutions (ESS) offers various products to create and manage resilient energy infrastructures. Infineon's distinctive expertise in energy generation, power conversion, transmission, and battery management makes it an ideal natural partner to advance Energy Storage Solutions, especially in terms of efficiency, innovation, performance, and optimal cost.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.