IKP20N60T

Infineon Technologies
726-IKP20N60T
IKP20N60T

Fabr.:

Descripción:
IGBT LOW LOSS DuoPack 600V 20A

Ciclo de vida:
Descatalogado:
Retirada prevista. El fabricante va a descatalogar este producto.
Modelo ECAD:
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En existencias: 2

Existencias:
2 Puede enviarse inmediatamente
Plazo de producción de fábrica:
19 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:

Precio (EUR)

Cant. Precio unitario
Precio total
2,30 € 2,30 €
1,33 € 13,30 €
1,06 € 106,00 €
0,834 € 417,00 €
0,715 € 715,00 €

Atributo del producto Valor del atributo Seleccionar atributo
Infineon
Categoría de producto: IGBT
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
41 A
166 W
- 40 C
+ 175 C
TRENCHSTOP IGBT
Tube
Marca: Infineon Technologies
Corriente de fuga puerta-emisor: 100 nA
Tipo de producto: IGBT Transistors
Cantidad del paquete de fábrica: 500
Subcategoría: IGBTs
Nombre comercial: TRENCHSTOP
Alias de parte #: SP000683066 IKP2N6TXK IKP20N60TXKSA1
Peso unitario: 6 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

300V to 1200V IGBTs

Infineon 300-1200V IGBTs have an extensive portfolio of IGBTs that achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.

Ultrafast 600V Trench IGBTs

Infineon Ultrafast 600V Trench IGBTs are rugged, reliable Insulated Gate Bipolar Transistors optimized for Uninterruptible Power Supplies (UPS), solar, industrial motor, and welding applications. These Ultrafast 600V Trench IGBTs utilize Trench thin wafer technology to offer lower conduction and switching losses. Infineon Ultrafast 600V Trench IGBTs are co-packaged with a soft recovery low Qrr diode. These devices are ideal for ultra-fast switching (8KHz to 30KHz) applications with 5µs short circuit rating. They feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.

IGBT Gate Drives with Murata DC-DC Converters

Infineon IGBTs are commonly used in high-power inverter and converter circuits that require significant isolated gate drive power to switch optimally. Murata small isolated DC/DC converters can provide that power. The same considerations apply in principle to gate drives for silicon, silicon carbide, and gallium nitride MOSFETs.