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IDH04G65C5XKSA2

Name: Infineon IDH04G65C5XKSA2
Brand: Infineon Technologies
SKU: 726-IDH04G65C5XKSA2
Price: 1.98 EUR
Availability: InStock

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Mouser REF:

726-IDH04G65C5XKSA2

Fabr. N.º:

IDH04G65C5XKSA2

Fabr.:

Infineon Technologies

Descripción:

Diodos Schottky de SiC SIC DIODES

Hoja de datos:

IDH04G65C5XKSA2 Hoja de datos (PDF)

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Más información sobre Infineon Technologies IDH04G65C5XKSA2

En existencias: 2.693

Existencias:: 2.693 Puede enviarse inmediatamente

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Plazo de producción de fábrica:: 17 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.

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Mínimo: 1 Múltiples: 1

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Precio (EUR)

Cant.	Precio unitario	Precio total
	1,98 €	1,98 €
	0,972 €	9,72 €
	0,86 €	86,00 €
	0,568 €	284,00 €

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Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	Infineon
Categoría de producto:	Diodos Schottky de SiC
RoHS:
Estilo de montaje:	Through Hole
Empaquetado / Estuche:	TO-220-2
Configuración:	Single
If - Corriente delantera:	4 A
Vrrm - Tensión inversa repetitiva:	650 V
Vf - Tensión delantera:	1.5 V
Ifsm - Corriente de sobretensión delantera:	38 A
Ir - Corriente inversa:	200 nA
Temperatura operativa mínima:	- 55 C
Temperatura operativa máxima:	+ 175 C
Serie:	XDH04G65
Empaquetado:	Tube
Marca:	Infineon Technologies
Pd (disipación de potencia):	48 W
Tipo de producto:	SiC Schottky Diodes
Cantidad del paquete de fábrica:	500
Subcategoría:	Diodes & Rectifiers
Nombre comercial:	CoolSiC
Vr - Tensión inversa:	650 V
Alias de parte #:	IDH04G65C5 SP001632402
Peso unitario:	2 g

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Hoja de datos

IDH04G65C5XKSA2 Hoja de datos (PDF)

Models

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

SPICE Models

Simulation Model SiC Diodes CoolSiC™ PSpice Generation 5 650V IDHxxG65C5 (Cremallera)

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TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Q_c x V_f).

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

CoolSiC™ Schottky Diodes

Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).