FGHL60T120RWD

onsemi
863-FGHL60T120RWD
FGHL60T120RWD

Fabr.:

Descripción:
IGBT 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT

Modelo ECAD:
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En existencias: 367

Existencias:
367 Puede enviarse inmediatamente
Plazo de producción de fábrica:
9 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:

Precio (EUR)

Cant. Precio unitario
Precio total
8,75 € 8,75 €
5,19 € 51,90 €
4,64 € 464,00 €

Atributo del producto Valor del atributo Seleccionar atributo
onsemi
Categoría de producto: IGBT
RoHS:  
REACH - SVHC:
Si
TO-247-3
Through Hole
Single
1.2 kV
20 V
120 A
833 W
- 55 C
+ 175 C
FGHL60T120RWD
Tube
Marca: onsemi
Corriente de fuga puerta-emisor: 400 nA
Tipo de producto: IGBT Transistors
Cantidad del paquete de fábrica: 450
Subcategoría: IGBTs
Productos encontrados:
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Atributos seleccionados: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

FGHL60T120RWD 1200V 60A Discrete IGBT

onsemi FGHL60T120RWD 1200V 60A Discrete IGBT uses advanced 7th-generation IGBT technology and is housed in a TO247 3-lead package. The onsemi FGHL60T120RWD delivers high performance, low conduction losses, and excellent switching control. The device is ideal for efficient operation in applications like motor control, UPS, data centers, and high-power switches.

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