TK16E60W5,S1VX
Ver especificaciones del producto
Fabr.:
Descripción:
MOSFET Power MOSFET N-Channel
Disponibilidad
-
Existencias:
-
No en almacénSe ha producido un error inesperado. Intente de nuevo más tarde.
-
Plazo de producción de fábrica:
-
20 Semanas Tiempo estimado para la producción en fábrica.
Precio (EUR)
| Cant. | Precio unitario |
Precio total
|
|---|---|---|
| 4,02 € | 4,02 € | |
| 2,03 € | 20,30 € | |
| 1,86 € | 186,00 € | |
| 1,57 € | 785,00 € | |
| 1,56 € | 1.560,00 € |
Hoja de datos
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
- TARIC:
- 8541290000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- MXHTS:
- 85412999
- ECCN:
- EAR99
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