TK100S04N1L,LQ
Ver especificaciones del producto
Fabr.:
Descripción:
MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
En existencias: 3.703
-
Existencias:
-
3.703 Puede enviarse inmediatamenteSe ha producido un error inesperado. Intente de nuevo más tarde.
-
Plazo de producción de fábrica:
-
20 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.
Precio (EUR)
| Cant. | Precio unitario |
Precio total
|
|---|---|---|
| Cinta / MouseReel™ | ||
| 3,01 € | 3,01 € | |
| 1,96 € | 19,60 € | |
| 1,38 € | 138,00 € | |
| 1,20 € | 600,00 € | |
| 1,11 € | 1.110,00 € | |
| Bobina completo(s) (realice el pedido en múltiplos de 2000) | ||
| 1,01 € | 2.020,00 € | |
Hoja de datos
Application Notes
- Applications of Low-Voltage One-Gate Logic ICs to Level Shift Circuits
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
Test/Quality Data
- TARIC:
- 8541290000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 854129000
- KRHTS:
- 8541299000
- MXHTS:
- 8541299900
- ECCN:
- EAR99
España

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2