SCS210AJHRTLL

ROHM Semiconductor
755-SCS210AJHRTLL
SCS210AJHRTLL

Fabr.:

Descripción:
Diodos Schottky de SiC 650V 10A SiC SBD AEC-Q101 Qualified

Modelo ECAD:
Descargue el Cargador de bibliotecas gratuito para convertir este archivo para su herramienta ECAD. Obtenga más información del modelo ECAD.

En existencias: 874

Existencias:
874 Puede enviarse inmediatamente
Plazo de producción de fábrica:
21 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.
Las cantidades mayores que 874 estarán sujetas a requisitos de pedido mínimo.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:

Precio (EUR)

Cant. Precio unitario
Precio total
6,84 € 6,84 €
4,48 € 44,80 €
3,79 € 379,00 €
3,66 € 1.830,00 €
Bobina completo(s) (realice el pedido en múltiplos de 1000)
3,28 € 3.280,00 €

Atributo del producto Valor del atributo Seleccionar atributo
ROHM Semiconductor
Categoría de producto: Diodos Schottky de SiC
RoHS:  
REACH - SVHC:
SMD/SMT
TO-263AB-3
Single
10 A
650 V
1.55 V
38 A
200 uA
+ 175 C
SCS2x
AEC-Q101
Reel
Cut Tape
Marca: ROHM Semiconductor
Pd (disipación de potencia): 83 W
Tipo de producto: SiC Schottky Diodes
Cantidad del paquete de fábrica: 1000
Subcategoría: Diodes & Rectifiers
Vr - Tensión inversa: 650 V
Alias de parte #: SCS210AJHR
Peso unitario: 1,685 g
Productos encontrados:
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Atributos seleccionados: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not
intended for volume automotive production without ROHM
Semiconductors prior approval.

Please contact ROHM Semiconductor for Production Part Approval
Process (PPAP) requirements or contact a Mouser Technical Sales
Representative for further assistance.

5-0617-50

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

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ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

AEC-Q101 SiC Schottky Barrier Diodes

ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. ROHM AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V to 1200V, a continuous forward current range of 1.2µA to 260µA, and a total power dissipation range between 48W to 280W. The devices are available in TO-247 and TO-263 packages, with a max temperature of +175°C.

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SiC Schottky Barrier Diodes

ROHM Semiconductor® SiC (Silicon Carbide) Schottky Barrier Diodes feature low total capacitive (Qc) that reduces switching loss, enabling high-speed switching operation. In addition, unlike silicon-based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. These devices are ideal for use as key devices in a variety of applications, including inverters and chargers for EVs and solar power conditioners.