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S25FL128SAGMFMR00

Name: Infineon S25FL128SAGMFMR00
Brand: Infineon Technologies
SKU: 727-5FL128SAGMFMR00
Price: 4.12 EUR
Availability: InStock

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Mouser REF:

727-5FL128SAGMFMR00

Fabr. N.º:

S25FL128SAGMFMR00

Fabr.:

Infineon Technologies

Descripción:

Flash NOR STD SPI

Hoja de datos:

S25FL128SAGMFMR00 Hoja de datos (PDF)

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Más información sobre Infineon Technologies S25FL128SAGMFMR00

En existencias: 380

Existencias:: 380 Puede enviarse inmediatamente

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Plazo de producción de fábrica:: 12 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

-,-- €

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-,-- €

Tarifa estimada:

Precio (EUR)

Cant.	Precio unitario	Precio total
	4,12 €	4,12 €
	3,80 €	38,00 €
	3,69 €	92,25 €
	3,60 €	180,00 €
	3,52 €	352,00 €
	3,06 €	765,00 €
	3,02 €	1.449,60 €
	2,99 €	2.870,40 €
	2,98 €	8.582,40 €

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Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	Infineon
Categoría de producto:	Flash NOR
RoHS:
Estilo de montaje:	SMD/SMT
Empaquetado / Estuche:	SOIC-16
Serie:	S25FL128S
Tamaño de memoria:	128 Mbit
Tensión del suministro - Mín:	2.7 V
Tensión del suministro - Máx:	3.6 V
Lectura máx. de corriente activa:	100 mA
Tipo de interfaz:	SPI
Frecuencia máxima de reloj:	133 MHz
Organización:	16 M x 8
Anchura de bus de datos:	8 bit
Tipo de temporización:	Synchronous
Temperatura operativa mínima:	- 40 C
Temperatura operativa máxima:	+ 125 C
Cualificación:	AEC-Q100
Empaquetado:	Tray
Marca:	Infineon Technologies
Sensibles a la humedad:	Yes
Tipo de producto:	NOR Flash
Velocidad:	133 MHz
Cantidad del paquete de fábrica:	480
Subcategoría:	Memory & Data Storage
Nombre comercial:	MirrorBit
Peso unitario:	8,311 g

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S25FL128SAGMFMR00 Hoja de datos (PDF)

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TARIC:: 8542326100
CNHTS:: 8542329090
USHTS:: 8542320051
ECCN:: 3A991.b.1.a

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands.

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V V_IO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.

Automotive Solutions

Infineon Technologies Automotive Solutions are an AEC-Q100 qualified portfolio that consists of high-quality products with a strict zero-defect policy in manufacturing and testing. MCU, NOR, RAM, and PMIC parts ensure quality and support for cluster, body electronics, HMI, and high-performance storage solutions.