S25FL128SAGMFB013

Infineon Technologies
727-25FL128SAGMFB013
S25FL128SAGMFB013

Fabr.:

Descripción:
Flash NOR STD SPI

Hoja de datos:
Modelo ECAD:
Descargue el Cargador de bibliotecas gratuito para convertir este archivo para su herramienta ECAD. Obtenga más información del modelo ECAD.
Más información
Más información sobre Infineon Technologies S25FL128SAGMFB013

En existencias: 1.266

Existencias:
1.266 Puede enviarse inmediatamente
Plazo de producción de fábrica:
12 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:

Precio (EUR)

Cant. Precio unitario
Precio total
3,84 € 3,84 €
3,58 € 35,80 €
3,47 € 86,75 €
3,40 € 170,00 €
3,31 € 331,00 €
3,21 € 802,50 €
3,13 € 1.565,00 €
Bobina completo(s) (realice el pedido en múltiplos de 1450)
3,12 € 4.524,00 €
2,94 € 8.526,00 €

Empaquetado alternativo

Fabr. N.º Ref.:
S25FL128SAGMFB010
Embalaje:
Tray
Disponibilidad:
En existencias
Precio:
3,88 €
Min:
1
Fabr. N.º Ref.:
S25FL128SAGMFB011
Embalaje:
Tube
Disponibilidad:
En existencias
Precio:
3,88 €
Min:
1

Atributo del producto Valor del atributo Seleccionar atributo
Infineon
Categoría de producto: Flash NOR
RoHS:  
SMD/SMT
SOIC-16
S25FL128S
128 Mbit
2.7 V
3.6 V
100 mA
SPI
133 MHz
16 M x 8
8 bit
Synchronous
- 40 C
+ 105 C
AEC-Q100
Reel
Cut Tape
Marca: Infineon Technologies
Sensibles a la humedad: Yes
Tipo de producto: NOR Flash
Velocidad: 133 MHz
Cantidad del paquete de fábrica: 1450
Subcategoría: Memory & Data Storage
Nombre comercial: MirrorBit
Peso unitario: 8,311 g
Productos encontrados:
Para mostrar productos similares, seleccione al menos una casilla
Seleccione al menos una casilla para mostrar productos similares dentro de esta categoría.
Atributos seleccionados: 0

Hoja de datos

TARIC:
8542326100
CNHTS:
8542319090
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
854232039
KRHTS:
8542321090
MXHTS:
8542320201
ECCN:
3A991.b.1.a

S25FL128S NOR Flash Memory Devices

Infineon Technologies S25FL128S FL-S NOR Flash Memory Devices are a 2.7V to 3.6V / 1.65V to 3.6V VIO Volt non-volatile memory using 65nm MIRRORBIT™ technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single-bit serial input and output (Single I/O or SIO), optional two-bit (Dual I/O or DIO), and four-bit (Quad I/O or QIO) serial commands. 

S25FL MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25FL128S/S25FL256S MIRRORBIT™ Flash Non-Volatile Memory devices employ MIRRORBIT technology that stores two data bits in each memory array transistor. These Infineon devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. Infineon S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

Automotive Solutions

Infineon Technologies Automotive Solutions are an AEC-Q100 qualified portfolio that consists of high-quality products with a strict zero-defect policy in manufacturing and testing. MCU, NOR, RAM, and PMIC parts ensure quality and support for cluster, body electronics, HMI, and high-performance storage solutions.

S25 MIRRORBIT™ Flash Non-Volatile Memory

Infineon Technologies S25 MIRRORBIT™ Flash Non-Volatile Memory uses MIRRORBIT technology, which stores two data bits in each memory array transistor; Eclipse architecture dramatically improves program and erase performance; and 65nm process lithography. This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Infineon S25 MIRRORBIT Flash Non-Volatile Memory is ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices

Infineon Technologies S25FLxS FL-S NOR Flash Memory Devices are 2.7V to 3.6V or 1.65V to 3.6V VIO Volt Non-volatile Memory. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MIRRORBIT™ technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in more effective programming and erasing than prior generation SPI programs or erased algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.

FL Serial NOR Flash Memory

Infineon Technologies FL Serial NOR Flash Memory offers a reduced pin count while providing optimal read/write performance. This feature makes the FL Serial NOR Flash Memory optimal for automotive, networking, consumer electronics, and industrial applications. An AEC-Q100 qualification and PPAP support are available for automotive customers. The Infineon FL family has four product groups: FL-S, FL-L, FL1-K, and FL-P.

Se ha producido un error inesperado.


¿Tiene alguna pregunta? Visite el Centro de Ayuda.
Si tiene alguna pregunta acerca de un pedido específico, inicie sesión en su cuenta.

Si tiene más problemas, póngase en contacto con nosotros llamando al 800-346-6873 o envíe un correo electrónico a help@mouser.com.