IXTP8N70X2M

IXYS
747-IXTP8N70X2M
IXTP8N70X2M

Fabr.:

Descripción:
MOSFET 700V/4A Ultra Junct X2-Class MOSFET

Hoja de datos:
Modelo ECAD:
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Más información sobre IXYS IXTP8N70X2M

Disponibilidad

Existencias:
No en almacén
Plazo de producción de fábrica:
41 Semanas Tiempo estimado para la producción en fábrica.
Plazo de entrega largo indicado para este producto.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:

Precio (EUR)

Cant. Precio unitario
Precio total
3,74 € 3,74 €
1,94 € 19,40 €
1,81 € 181,00 €
1,59 € 795,00 €

Atributo del producto Valor del atributo Seleccionar atributo
IXYS
Categoría de producto: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
700 V
8 A
500 mOhms
- 30 V, 30 V
3 V
12 nC
- 55 C
+ 150 C
150 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
Tiempo de caída: 24 ns
Transconductancia delantera: mín.: 4.8 S
Tipo de producto: MOSFETs
Tiempo de establecimiento: 28 ns
Serie: X2-Class
Cantidad del paquete de fábrica: 50
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo típico de retraso de apagado: 53 ns
Tiempo de retardo de conexión típico: 24 ns
Peso unitario: 2 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

PCN

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

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IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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X2-Class Power MOSFETs with HiPerFET™

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Ultra Junction MOSFETs

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HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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