IXTP8N70X2M

IXYS
747-IXTP8N70X2M
IXTP8N70X2M

Fabr.:

Descripción:
MOSFET 700V/4A Ultra Junct X2-Class MOSFET

Hoja de datos:
Modelo ECAD:
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Más información sobre IXYS IXTP8N70X2M

Disponibilidad

Existencias:
No en almacén
Plazo de producción de fábrica:
41 Semanas Tiempo estimado para la producción en fábrica.
Plazo de entrega largo indicado para este producto.
Mínimo: 1   Múltiples: 1
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:

Precio (EUR)

Cant. Precio unitario
Precio total
4,87 € 4,87 €
3,19 € 31,90 €
2,05 € 205,00 €
1,82 € 910,00 €

Atributo del producto Valor del atributo Seleccionar atributo
IXYS
Categoría de producto: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
700 V
8 A
500 mOhms
- 30 V, 30 V
3 V
12 nC
- 55 C
+ 150 C
150 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
Tiempo de caída: 24 ns
Transconductancia delantera: mín.: 4.8 S
Tipo de producto: MOSFETs
Tiempo de establecimiento: 28 ns
Serie: X2-Class
Cantidad del paquete de fábrica: 50
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo típico de retraso de apagado: 53 ns
Tiempo de retardo de conexión típico: 24 ns
Peso unitario: 2 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

PCN

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Códigos de cumplimiento
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Clasificaciones de origen
País de origen:
República de Corea
País de origen del ensamblaje:
No disponible
País de difusión:
No disponible
El país puede cambiar en el momento del envío.

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Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

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HiPerFET™ Power MOSFETs

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