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IXTK120N65X2

Name: IXYS IXTK120N65X2
Brand: IXYS
SKU: 747-IXTK120N65X2
Price: 19.04 EUR
Availability: InStock

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Mouser REF:

747-IXTK120N65X2

Fabr. N.º:

IXTK120N65X2

Fabr.:

IXYS

Descripción:

MOSFET TO264 650V 120A N-CH X2CLASS

Hoja de datos:

IXTK120N65X2 Hoja de datos

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Más información sobre IXYS IXTK120N65X2

En existencias: 410

Existencias:: 410 Puede enviarse inmediatamente

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Plazo de producción de fábrica:: 27 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

-,-- €

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Tarifa estimada:

Precio (EUR)

Cant.	Precio unitario	Precio total
	19,04 €	19,04 €
	15,63 €	156,30 €

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Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	IXYS
Categoría de producto:	MOSFET
RoHS:
REACH - SVHC:
Tecnología:	Si
Estilo de montaje:	Through Hole
Empaquetado / Estuche:	TO-247-3
Polaridad de transistor:	N-Channel
Número de canales:	1 Channel
Vds (Tensión separación drenador-fuente):	650 V
Id: corriente de drenaje continuo:	120 A
Rds encendido (drenaje de la fuente en resistencia):	23 mOhms
Vgs (tensión de compuerta-fuente):	- 30 V, 30 V
Vgs th (tensión umbral compuerta-fuente):	3 V
Qg (carga de compuertas):	230 nC
Temperatura operativa mínima:	- 55 C
Temperatura operativa máxima:	+ 150 C
Pd (disipación de potencia):	1.25 mW
Modo canal:	Enhancement
Nombre comercial:	HiPerFET
Empaquetado:	Tube
Marca:	IXYS
Configuración:	Single
Tiempo de caída:	10 ns
Transconductancia delantera: mín.:	66 S
Tipo de producto:	MOSFETs
Tiempo de establecimiento:	24 ns
Cantidad del paquete de fábrica:	25
Subcategoría:	Transistors
Tipo de transistor:	1 N-Channel
Tiempo típico de retraso de apagado:	87 ns
Tiempo de retardo de conexión típico:	32 ns
Peso unitario:	6 g

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TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541290065
ECCN:: EAR99

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