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IXFP34N65X2M

Name: IXYS IXFP34N65X2M
Brand: IXYS
SKU: 747-IXFP34N65X2M
Price: 9.16 EUR
Availability: InStock

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Mouser REF:

747-IXFP34N65X2M

Fabr. N.º:

IXFP34N65X2M

Fabr.:

IXYS

Descripción:

MOSFET 650V/34A OVERMOLDED TO-220

Hoja de datos:

IXFP34N65X2M Hoja de datos

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Más información sobre IXYS IXFP34N65X2M

En existencias: 184

Existencias:: 184 Puede enviarse inmediatamente

Se ha producido un error inesperado. Intente de nuevo más tarde.
Plazo de producción de fábrica:: 26 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.

Las cantidades mayores que 184 estarán sujetas a requisitos de pedido mínimo.

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Mínimo: 1 Múltiples: 1

Precio unitario:

-,-- €

Precio total:

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Tarifa estimada:

Precio (EUR)

Cant.	Precio unitario	Precio total
	9,16 €	9,16 €
	5,02 €	50,20 €
	4,42 €	442,00 €
	4,29 €	2.145,00 €

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Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	IXYS
Categoría de producto:	MOSFET
RoHS:
Tecnología:	Si
Estilo de montaje:	Through Hole
Empaquetado / Estuche:	TO-220-3
Polaridad de transistor:	N-Channel
Número de canales:	1 Channel
Vds (Tensión separación drenador-fuente):	650 V
Id: corriente de drenaje continuo:	34 A
Rds encendido (drenaje de la fuente en resistencia):	100 mOhms
Vgs (tensión de compuerta-fuente):	- 30 V, 30 V
Vgs th (tensión umbral compuerta-fuente):	3.5 V
Qg (carga de compuertas):	56 nC
Temperatura operativa mínima:	- 55 C
Temperatura operativa máxima:	+ 150 C
Pd (disipación de potencia):	40 W
Modo canal:	Enhancement
Nombre comercial:	HiPerFET
Empaquetado:	Tube
Marca:	IXYS
Configuración:	Single
Tiempo de caída:	30 ns
Transconductancia delantera: mín.:	12 S
Tipo de producto:	MOSFETs
Tiempo de establecimiento:	60 ns
Serie:	650V Ultra Junction X2
Cantidad del paquete de fábrica:	50
Subcategoría:	Transistors
Tipo de transistor:	1 N-Channel
Tiempo típico de retraso de apagado:	64 ns
Tiempo de retardo de conexión típico:	37 ns
Peso unitario:	2 g

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Códigos de cumplimiento

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Clasificaciones de origen

País de origen:: República de Corea
País de origen del ensamblaje:: No disponible
País de difusión:: No disponible

El país puede cambiar en el momento del envío.

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

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IXYS X2-Class Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages, including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.

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Commercial & Tactical UAV Systems

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DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

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