IXFH18N65X2

IXYS
747-IXFH18N65X2
IXFH18N65X2

Fabr.:

Descripción:
MOSFET 650V/18A TO-247

Hoja de datos:
Modelo ECAD:
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Disponibilidad

Existencias:
No en almacén
Plazo de producción de fábrica:
27 Semanas Tiempo estimado para la producción en fábrica.
Plazo de entrega largo indicado para este producto.
Mínimo: 300   Múltiples: 30
Precio unitario:
-,-- €
Precio total:
-,-- €
Tarifa estimada:
Este producto se envía de forma GRATUITA

Precio (EUR)

Cant. Precio unitario
Precio total
4,45 € 1.335,00 €
3,96 € 2.019,60 €

Atributo del producto Valor del atributo Seleccionar atributo
IXYS
Categoría de producto: MOSFET
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
18 A
200 mOhms
- 30 V, 30 V
3 V
29 nC
- 55 C
+ 150 C
290 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
Tiempo de caída: 26 ns
Transconductancia delantera: mín.: 8 S
Tipo de producto: MOSFETs
Tiempo de establecimiento: 30 ns
Serie: 650V Ultra Junction X2
Cantidad del paquete de fábrica: 30
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo típico de retraso de apagado: 50 ns
Tiempo de retardo de conexión típico: 20 ns
Peso unitario: 6 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

PCN

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Códigos de cumplimiento
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Clasificaciones de origen
País de origen:
República de Corea
País de origen del ensamblaje:
No disponible
País de difusión:
No disponible
El país puede cambiar en el momento del envío.

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