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2ED21824S06JXUMA1

Name: Infineon 2ED21824S06JXUMA1
Brand: Infineon Technologies
SKU: 726-2ED21824S06JXUMA
Price: 1.82 EUR
Availability: InStock

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Mouser REF:

726-2ED21824S06JXUMA

Fabr. N.º:

2ED21824S06JXUMA1

Fabr.:

Infineon Technologies

Descripción:

Controlador de puerta LEVEL SHIFT DRIVER

Hoja de datos:

2ED21824S06JXUMA1 Hoja de datos (PDF)

Modelo ECAD:

Descargue el Cargador de bibliotecas gratuito para convertir este archivo para su herramienta ECAD. Obtenga más información del modelo ECAD.

En existencias: 5.706

Existencias:: 5.706 Puede enviarse inmediatamente

Se ha producido un error inesperado. Intente de nuevo más tarde.
Plazo de producción de fábrica:: 34 Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

-,-- €

Precio total:

-,-- €

Tarifa estimada:

Empaquetado:

Bobina completo(s) (realice el pedido en múltiplos de 2500)

Cinta extraída

MouseReel™ (+5,00 €)

Precio (EUR)

Cant.	Precio unitario	Precio total
Cinta / MouseReel™ ^†
	1,82 €	1,82 €
	1,35 €	13,50 €
	1,23 €	30,75 €
	1,10 €	110,00 €
	1,04 €	260,00 €
	0,998 €	499,00 €
	0,972 €	972,00 €
Bobina completo(s) (realice el pedido en múltiplos de 2500)
	0,955 €	2.387,50 €
	0,937 €	4.685,00 €

† La tarifa de 5,00 € de MouseReel™ se añadirá y calculará en el carro de compra. Los pedidos de MouseReel™ no se pueden cancelar ni devolver. ↩

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Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	Infineon
Categoría de producto:	Controlador de puerta
RoHS:
Producto:	IGBT, MOSFET Gate Drivers
Tipo:	Half-Bridge
Estilo de montaje:	SMD/SMT
Empaquetado / Estuche:	DSO-14
Número de controladores:	1 Driver
Número de salidas:	1 Output
Corriente de salida:	2.5 A
Tensión del suministro - Mín:	10 V
Tensión del suministro - Máx:	20 V
Tiempo de establecimiento:	15 ns
Tiempo de caída:	15 ns
Temperatura operativa mínima:	- 40 C
Temperatura operativa máxima:	+ 125 C
Empaquetado:	Reel
Empaquetado:	Cut Tape
Empaquetado:	MouseReel
Marca:	Infineon Technologies
Tipo lógico:	CMOS, LSTTL
Tiempo de retraso de apagado máximo:	300 ns
Tiempo de retraso de encendido máximo:	300 ns
Sensibles a la humedad:	Yes
Corriente de suministro operativa:	550 uA
Pd (disipación de potencia):	1 W
Tipo de producto:	Gate Drivers
Retardo de propagación (máx.):	300 ns
Apagado:	Shutdown
Cantidad del paquete de fábrica:	2500
Subcategoría:	PMIC - Power Management ICs
Tecnología:	Si
Alias de parte #:	2ED21824S06J SP003244528
Peso unitario:	138,510 mg

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Atributos seleccionados: 0

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Hoja de datos

2ED21824S06JXUMA1 Hoja de datos (PDF)

Models

2ED21824S06JXUMA1 Symbol & Footprint by SnapMagic

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CNHTS:: 8542399000
USHTS:: 8542310075
ECCN:: EAR99

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

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2ED210x Low-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers offer an integrated bootstrap diode (BSD) and silicon-on-insulator (SOI) technology in a DSO-8 or DSO-14 package. The high-voltage, level-shift SOI technology in these 0.7A drivers provides robustness against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process enables monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers feature excellent ruggedness and noise immunity against negative transient voltages on the VS pin.

2ED218x High-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers feature silicon-on-insulator (SOI) technology and an integrated bootstrap diode (BSD) in a DSO-8 or DSO-14 package. The series combines high current with high speed to drive MOSFETs and IGBTs with typical 2.5A sink and source current. The high-voltage, level-shift SOI technology provides robustness to protect against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers offer ruggedness and noise immunity against negative transient voltages on the VS pin.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.